English
​​​​​​​ +86-13851427688
 inf1188@vip.sina.com
Add : Room 701, Building A1, No. 55 Runfa Road, Jiangning District, Nanjing, China
You are here: Home » Products » Transformers » Gate Drive Transformers » Auxiliary Gate Drive Transformer » EP7 Auxiliary Gate Drive Transformer

loading

EP7 Auxiliary Gate Drive Transformer

 
Characteristics:
  • Interwinding capacitance down to <1pF
  • Tiny surface mount EP7 package
  • Dielectric insulation up to 4 kV AC
  • Basic insulation for 568 Vrms / 800 Vpk
  • Safety: IEC62368-1 / IEC61558-2-16
  • AEC-Q200 Qualification
  • Operating temperature: -40 °C up to +130°C
  • Common control voltages for SiC MOSFET’s
  • High Common-mode Transient Immunity(CMTI)
  • Flyback, LLC, Half-Bridge topologies
  • Up to 6 W output power
  • Wide range input voltages 6 V to 36 V
  • Different unipolar and bipolar voltages
  • High efficiency and very compact solution
 
Options:
  • Tiny SMD EP7 package,interwinding capacitance <1pF
  • 4kV AC dielectric insulation, basic insulation (568Vrms/800Vpk)
  • IEC62368-1/IEC61558-2-16 compliant, AEC-Q200 qualified 
  • -40°C to +130°C operating temp, high CMTI
  • Supports SiC MOSFETs, 6-36V input, up to 6W output
  • For industrial drives, EV chargers, solar inverters & SiC converters
  • With Analog Devices/TI/onsemi reference designs
 
Common Applications:
  • Industrial drives
  • AC motor inverters
  • HEV/EV charging station
  • Battery chargers
  • Solar inverters
  • Data centers
  • Uninterruptible power supplies
  • Active power factor correction
  • SiC-MOSFET based power converter
Availability:
Quantity:
Inquiry

facebook sharing button
twitter sharing button
line sharing button
wechat sharing button
linkedin sharing button
pinterest sharing button
whatsapp sharing button
kakao sharing button
snapchat sharing button
telegram sharing button
sharethis sharing button
Previous: 
Next: 
EP7 Auxiliary Gate Drive Transformer
Product Description
Download


Physical Propertie


Order Code VIN
(V)		 Vout1
(V)		 Vout2
(V)		 Vout3
(V)		 Vaux
(V)		 Po
(W)		 Cww1
(pF)		 L
(μH)		 lSAT
(A)		 ∫Udt
(Vμs)		 fswitch
(kHz)		 n
INF-EP7-42μH 6-18 20 5 5 5 1.5 6.4 42 1.2 - 150 1.56:3.89:1:1:1
INF-EP7-23μH 6 9 - - - - 2 23 - 40 500 1:1.57
INF-EP7-10μH 7-31 27 - - 13 2.7 3.25 10 2 - 400 1.2:2:1
INF-EP7-16.5μH 7.5 13 - - - 4.55 0.68 16.5 - 36 500 1:1.67
INF-EP7-67μH 7.5 7.5 - - - - 2.6 67 - 70 500 1:1.08
INF-EP7-23μH 7.5 9 - - - - 2.1 23 - 40 500 1:1.29
INF-EP7-7μH 9-18 15 -4 - - 6 7.5 7 5 - 350 2.25:3.5:1
INF-EP7-6μH 9-18 19 - - - 6 6.8 6 6.2 - 350 1:2
INF-EP7-18μH 9-18 15 -4 - - 3 7 18 1.6 - 350 2.25:3.5:1
INF-EP7-18μH 9-18 19 - - - 3 6.8 18 1.95
350 1:2
INF-EP7-7μH 9-18 19 4 - - 6 7.5 7 4.5 - 350 2.25:4.25:1
INF-EP7-7μH 9-18 20 5 - - 6 7.3 7 4.5 - 350 1.8:3.6:1
INF-EP7-42μH 12-18 15 7.5 7.5 5 1.5 7.8 42 1.25 - 150 2:2.86:1.43:1.43:1
INF-EP7-50μH 13 11.5 - - - 6 1.3 50 - 60 500 1:1
INF-EP7-256μH 15 30 - - - 3 2.1 256 - 72 250 1:2
INF-EP7-56μH 15 6 - - - - 2 56 - 64 500 2.2:1
INF-EP7-56μH 15 7.5 - - - - 2 56 - 64 500 1.83:1
INF-EP7-67μH 15 12 - - - - 2 67 - 70 500 1.2:1
INF-EP7-27μH 18-36 15 -4 - - 5 7 27 1.5 - 350 3.5:3.5:1
INF-EP7-27μH 18-36 19 - - - 5 8.2 27 2 - 350 1:1.2



Technical Specifications


屏幕截图 2025-10-24 095825

Product Description
Download

Related Products

content is empty!

ONLINE MESSAGE

Phone : +86-13851427688 
+86-18251887688
Email : inf1188@vip.sina.com
Add : Room 701, Building A1, No. 55 Runfa Road, Jiangning District, Nanjing, China

EMC/EMI Components

Power Inductors & Transformers

Copyright © 2026 Nanjing Yingfa Electronics Technology Co., Ltd. All Rights Reserved. Sitemap. Privacy Policy.  苏ICP备2022036817号-2