Views: 0 Author: Site Editor Publish Time: 2026-06-16 Origin: Site
The detailed calculation process and core parameters of the high-frequency transformer are sorted out as follows:
Before specific calculations, the following basic design parameters are uniformly defined:
Design Parameter | Value | Unit | Description |
Input AC Voltage (Vin_ac) | 85 ~ 265 | Vrms | Universal input voltage range |
Input AC Frequency (fac) | 50 / 60 | Hz | - |
Output Voltage (Vo) | 20 | V | - |
Output Current (Io) | 3 | A | - |
Switching Frequency (f) | 130 | kHz | - |
Estimated Efficiency (η) | 0.85 | - | Preliminary estimated efficiency for design |
Maximum Duty Cycle (Dmax) | 0.45 | - | Universal value for both DCM and CCM |
Output Diode Voltage Drop (Vf) | 1 | V | - |
Reflected Voltage (Vor) | 100 | V | Designed based on 100V firstly, then optimized according to actual commissioning |
Vdcmin: 85Vac×√2 -20V(drop) ≈ 100Vdc
Vdcmax: 265Vac × √2 ≈ 374Vdc
The above results are obtained via calculation and adopted as the basis for subsequent derivation to simplify the computation.
In DCM (Krp=1) mode, the primary current rises linearly from zero with the maximum current ripple ratio.
Formula: n = Vor / (Vo + Vf)
Calculation result: n=100V / (20V + 1V) ≈ 4.76
Formula: Ipk = (2 ∗ Pin) / (Vdcmin ∗ Dmax)
Calculation result: Ipk_DCM = (2 ∗ 70.59W) / (100V ∗ 0.45) ≈ 3.14A
Formula: Lp = (Vdcmin ∗ Dmax) / (Ipk ∗ f)
Calculation result: Lp_DCM = (100V ∗ 0.45) / (3.14A ∗ 130kHz) ≈ 110.3μH
Krp=0.65 indicates a relatively large current ripple in CCM mode, while the current does not reach the critical point and still contains partial DC component.
Formula: n = Vor / (Vo + Vf)
Calculation result: n = 100V / (20V + 1V) ≈ 4.76
Formula: Iavg = Pin / Vdcmin
Calculation result: Iavg_CCM = 70.59W / 100V ≈ 0.706A
Formula: Ipk = Iavg / [ (1-Krp/2) * Dmax ]
Calculation result: Ipk_CCM=0.706A/[ (1- 0.65/2) * 0.45 ] ≈ 2.29A
Formula: Lp = (Vdcmin ∗ Dmax) / (Ipk ∗ Krp ∗ f)
Calculation result: Lp_CCM=(100V*0.45) / (2.29A ∗ 0.65 ∗ 130kHz) ≈ 232.8μH
Core Model: EE25 (PC95), a commonly used power magnetic core
Effective Cross-sectional Area (Ae): 52 mm²
Window Area (Aw): 84.9 mm² (typical value including bobbin)
Magnetic Path Length (le): 57.5 mm
Saturation Flux Density (Bsat): 0.39 T @ 100℃
Maximum Operating Flux Swing (ΔB) for DCM: 0.25 T
Maximum Operating Flux Swing (ΔB) for CCM: 0.16 T
Note: Due to DC magnetic bias in CCM mode, the allowable AC flux swing ΔB is generally set to a smaller value (0.12~0.18 T) to avoid core saturation. The calculation adopts 0.16 T for rigorous design.
Switching frequency f = 130 kHz, skin depth of copper:
δ=66.1/√f=66.1/√130000=0.183mm
To prevent obvious increase of AC resistance, the diameter of single-strand wire shall be less than 2δ≈ 0.366 mm. Multi-strand parallel winding, Litz wire or copper foil is required for windings with large current.
Current density: J = 6A/mm^2 (applicable for natural cooling or forced air cooling).
V_{dcmin}=100V , D_{max}= 0.45 , f = 130kHz
Reflected voltage V_{or}= 100V , turn ratio n ={V_{or}}/{V_o+V_f} =100/{20+1} = 4.76
Primary turns:
N_p=V_{dcmin}×D_{max}} / {ΔB×A_e×f} =100×0.45 / {0.25×52×10^{-6}×130×10^3} =26.8 →27Turns
Secondary turns:
N_s = N_p/n= 27/4.76= 5.67 → 6Turns
Actual turn ratio n_{real} = 27/6 = 4.5 , reflected voltage V_{or} = 4.5×21=94.5 V. It has negligible impact on primary voltage stress and is acceptable.
Primary turns:
N_p=\frac{100×0.45}{0.16×52×10^{-6}×130×10^3} = 41.7 → 42Turns
Secondary turns:
N_s = 42/4.76 =8.82 → 9Turns
Actual turn ratio n = 42/9=4.67, reflected voltage 4.67×21= 98V.
Note: CCM mode requires more turns to reduce flux swing, which results in larger inductance (232.8 μH) and smaller air gap.
Mode | Ipk (A) | Krp | Dmax | Required Bare Copper Area (mm²) | Strand × Wire Gauge (mm) | Actual Total Copper Area (mm²) |
|---|---|---|---|---|---|---|
DCM | 3.14 | 1.0 | 0.45 | 1.22/6≈0.203 | 4 × 0.25 | 0.196 |
CCM | 2.29 | 0.65 | 0.45 | 1.08/6≈0.180 | 4 × 0.25 | 0.196 |
Cross-sectional area of 0.25 mm enameled wire (bare copper):π×(0.25/2)^2 ≈ 0.0491mm^2
Total area of 4-strand parallel winding: 0.196mm^2, which meets the current-carrying requirement and reduces loss.
The diameter of single 0.25 mm wire is less than 2δ=0.366mm, so the skin effect can be ignored.
Output: 20V/3A, RMS current of secondary winding (full-wave rectification):
I_{rms_sec}=I_o√{1-D_{max}/{D_{max}}=3×√{1-0.45}/{0.45}}=3×1.105=3.32A
Note: For the secondary diode rectifier of flyback topology, the RMS current calculation formula is I_o √{(1-D)/D}.
Required bare copper area: 3.32/6=0.553mm^2
Adopt 0.25 mm multi-strand wire: single strand area 0.0491mm^2.
Required strand number: 0.553 / 0.0491 ≈ 11.3 → select 12 strands × 0.25 mm, total copper area 0.589 mm^2.
Turns are calculated according to turn ratio. The current is very small, so single-strand 0.15 mm wire is adopted with cross-sectional area 0.0177mm^2. It occupies negligible window area.
Formula: lg = (4π{e}^{-7} × N_p^2 × Ae) / Lp
Calculation results:
DCM: lg ≈ 0.43mm
CCM: lg ≈ 0.49mm
Primary RMS current (Irms):
DCM: {Irms_DCM} = Ipk × √{Dmax/3} ≈ 1.22A
CCM: {Irms\_CCM} = Ipk × {√{Krp^2/3} - Krp + 1}} × √{Dmax} ≈ 1.08A
Secondary RMS current (I_{sec_rms}: 60W output, secondary RMS current ≈ 8.3A.
Current density (J): 6A/mm^2
Bare wire cross-sectional area (S): S = Irms / J
Wire diameter (ϕ): ϕ = 1.13 ×√{S}
Calculated wire gauges for primary and secondary windings:
DCM Primary: ϕ 0.51 mm (or multi-strand fine wire)
CCM Primary: ϕ 0.48 mm (or multi-strand fine wire)
Secondary: ϕ 1.32 mm (multi-strand parallel winding or copper foil is recommended)
Bobbin window area A_w = 84.9mm^2.
Key factors for actual winding:
Insulation of enameled wire (occupancy factor ≈ 0.85~0.9)
Interlayer insulating tape (0.05 mm per layer)
Margin for bobbin and winding process: the actual usable window area is generally 70%~80% of A_w.
Simplified calculation: Copper window factor = Total bare copper area / A_w. The target value for engineering application is 0.2~0.4.
Mode | Winding | Turns | Strand × Wire Gauge (mm) | Area per Strand (mm²) | Total Bare Copper Area (mm²) |
|---|---|---|---|---|---|
DCM | Primary | 27 | 4×0.25 | 0.0491 | 5.30 |
DCM | Secondary | 6 | 12×0.25 | 0.0491 | 3.54 |
DCM | Auxiliary | 10 | 1×0.25 | 0.049 | 0.49 |
- | Total | - | - | - | 9.02 |
CCM | Primary | 42 | 4×0.25 | 0.0491 | 8.25 |
CCM | Secondary | 9 | 12×0.25 | 0.0491 | 5.30 |
CCM | Auxiliary | 10 | 1×0.25 | 0.049 | 0.18 |
- | Total | - | - | - | 13.73 |
DCM: 9.02 / 84.9 = 0.106 (10.6%)
CCM: 13.73 / 84.9 = 0.162 (16.2%)
The outer diameter of 0.25 mm enameled wire is about 0.28 mm (0.02~0.03 mm larger than bare copper due to insulation coating), increasing the occupied area by about 25%. Interlayer tape and bobbin barriers will further reduce utilization rate. In engineering practice, the actual fill factor (including insulation) is approximately 1.3~1.5 times the bare copper window factor.
If the usable window area is set to 75% of A_w (deducting bobbin and process margin):
Maximum allowable bare copper area ≈ 0.75 × 84.9 ≈ 63.7mm^2, which is far larger than the actual value. The window margin is sufficient for both schemes.
Item | DCM Mode (Krp=1) | CCM Mode (Krp=0.65) |
|---|---|---|
Peak Current (Ipk) | 3.14 A | 2.29 A |
Primary Inductance (Lp) | 110 μH | 233 μH |
Core Air Gap (lg) | 0.43 mm (Larger) | 0.49 mm (Smaller) |
Characteristics | High peak current, higher current stress for MOSFET; No diode reverse recovery issue, low EMI; Good light-load efficiency | Relatively low peak current, low stress for MOSFET; Diode reverse recovery exists, EMI design is more complex; Excellent heavy-load efficiency; Larger inductance and smaller air gap |
Recommended Application | Cost-sensitive consumer electronics, low & medium power adapters with high requirement on light-load efficiency | Industrial power supplies and equipment operating in harsh environments with strict requirements on heavy-load efficiency and temperature rise |
The above two schemes cover all key theoretical calculations. In practical engineering, transformer parameters usually need fine tuning combined with EMC test and temperature rise test, such as adjusting inductance or turn ratio for optimal performance.